Tunnel junctions on as-grown MgB2 films

Kenji Ueda; Michio Naito

doi:10.1016/j.physc.2004.02.164

Tunnel junctions on as-grown MgB₂ films

Kenji Ueda^*, Michio Naito

^*この研究の対応する著者

研究成果: Conference article › 査読

9 被引用数 (Scopus)

抄録

We prepared MgB₂ films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed T_c (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB₂ films. Of these, Au/MgO/MgB₂ junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB₂/Al ₂O₃/MgB₂ junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

本文言語	English
ページ（範囲）	134-135
ページ数	2
ジャーナル	Physica C: Superconductivity and its applications
巻	408-410
号	1-4
DOI	https://doi.org/10.1016/j.physc.2004.02.164
出版ステータス	Published - 2004 8月
外部発表	はい
イベント	Proceedings of the International Conference on Materials - Rio de Janeiro, Brazil 継続期間: 2003 5月 25 → 2003 5月 30

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
エネルギー工学および電力技術
電子工学および電気工学

文献へのアクセス

10.1016/j.physc.2004.02.164

他のファイルとリンク

引用スタイル

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title = "Tunnel junctions on as-grown MgB2 films",

abstract = "We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.",

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AB - We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

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