Tunneling barrier height imaging and polycrystalline Si surface observations

S. Hosaka, K. Sagara, T. Hasegawa, K. Takata, S. Hosoki

研究成果: Article

15 引用 (Scopus)

抜粋

An influence of the dopant concentration on polycrystalline Si grain structure, electronic structure and dopant segregation in 800 °C and 30 min annealing is investigated. Barrier height images and topographies of arsenic implanted polycrystalline silicon surface are obtained using tunneling barrier height imaging (TBI) and scanning tunneling microscopy (STM) with the vacuum pressure less than 5X 10-7Torr. As results, a conduction band bending caused by the arsenic ion implantation can be observed by the TBI. A comparison of the TBI image with the STM image can identify whether region is implanted or nonimplanted. In addition, dopant segregation structures at the grain boundary can be found out. With dopant concentration, 1014 cm -2As + implanted polycrystalline silicon grain structures of 4—80 nm size grow large.

元の言語English
ページ(範囲)270-274
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
8
発行部数1
DOI
出版物ステータスPublished - 1990 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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