Two types of on-state observed in the operation of a redox-based three-terminal device

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Tsuyoshi Hasegawa, Satoshi Watanabe, Shu Yamaguchi, Toshiro Hiramoto, Masakazu Aono

研究成果: Conference contribution

抄録

A redox-based three-terminal device was fabricated using Ta 2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states.

本文言語English
ホスト出版物のタイトルAdvanced Micro-Device Engineering IV
出版社Trans Tech Publications Ltd
ページ111-115
ページ数5
ISBN(印刷版)9783037859629
DOI
出版ステータスPublished - 2014
外部発表はい
イベント4th International Conference on Advanced Micro-Device Engineering, AMDE 2012 - Kiryu, Japan
継続期間: 2012 12 72012 12 7

出版物シリーズ

名前Key Engineering Materials
596
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

Other4th International Conference on Advanced Micro-Device Engineering, AMDE 2012
CountryJapan
CityKiryu
Period12/12/712/12/7

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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