抄録
UV light-exited ozone has been applied for rapid low-temperature oxidation of silicon in a wafer-transfer type chamber. Oxidation was made in almost 100% ozone atmosphere with KrF excimer laser (248 nm) which enables the effective supply of O (1D) atoms to the processed surface. In this system, SiO2 film with a thickness of more than 3.5 nm is achieved even as low as 200°C. Uniform 2.9 nm film formation over 5-inch wafer with a thickness fluctuation of 0.1 nm was also obtained when KrF laser irradiation area was enlarged by a cylindrical concave lens. Current-voltage measurement has been employed to characterize SiO2 films and it is confirmed that the catastrophic breakdown field strength was 13 MV/cm. Processing pressure dependence of density of O(1D) atoms which contributing to the oxidation was estimated. Experimental result that the thickness of SiO 2 film increases by decreasing the processing pressure agrees with our estimated result at the pressure range between 340 Pa and 820 Pa.
本文言語 | English |
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ページ(範囲) | 309-312 |
ページ数 | 4 |
ジャーナル | Shinku/Journal of the Vacuum Society of Japan |
巻 | 48 |
号 | 5 |
DOI | |
出版ステータス | Published - 2005 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面、皮膜および薄膜
- 電子工学および電気工学