Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers

Masahiro Goto, Yibin Xu, Tianzhuo Zhan, Michiko Sasaki, Chikashi Nishimura, Yohei Kinoshita, Mamoru Ishikiriyama

研究成果: Article

2 引用 (Scopus)

抜粋

Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K-1 m-1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10-9 to 3.6 × 10-9 m2 K W-1 when the interfacial density increases from 0.15 to 0.77 nm-1.

元の言語English
記事番号045202
ジャーナルApplied Physics Express
11
発行部数4
DOI
出版物ステータスPublished - 2018 4 1
外部発表Yes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Goto, M., Xu, Y., Zhan, T., Sasaki, M., Nishimura, C., Kinoshita, Y., & Ishikiriyama, M. (2018). Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers. Applied Physics Express, 11(4), [045202]. https://doi.org/10.7567/APEX.11.045202