Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato; Koji Takeda; Akihiko Shinya; Kengo Nozaki; Hideaki Taniyama; Koichi Hasebe; Takaaki Kakitsuka; Masaya Notomi; Shinji Matsuo

doi:10.1109/ISLC.2012.6348388

Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

Tomonari Sato^*, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

^*この研究の対応する著者

研究成果: Conference article › 査読

4 被引用数 (Scopus)

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An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

本文言語	English
論文番号	6348388
ページ（範囲）	169-170
ページ数	2
ジャーナル	Conference Digest - IEEE International Semiconductor Laser Conference
DOI	https://doi.org/10.1109/ISLC.2012.6348388
出版ステータス	Published - 2012
外部発表	はい
イベント	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States 継続期間: 2012 10月 7 → 2012 10月 10

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

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10.1109/ISLC.2012.6348388

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title = "Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer",

abstract = "An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.",

author = "Tomonari Sato and Koji Takeda and Akihiko Shinya and Kengo Nozaki and Hideaki Taniyama and Koichi Hasebe and Takaaki Kakitsuka and Masaya Notomi and Shinji Matsuo",

year = "2012",

doi = "10.1109/ISLC.2012.6348388",

language = "English",

pages = "169--170",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

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note = "23rd IEEE International Semiconductor Laser Conference, ISLC 2012 ; Conference date: 07-10-2012 Through 10-10-2012",

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T1 - Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

AU - Sato, Tomonari

AU - Takeda, Koji

AU - Shinya, Akihiko

AU - Nozaki, Kengo

AU - Taniyama, Hideaki

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

AU - Matsuo, Shinji

PY - 2012

Y1 - 2012

N2 - An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

AB - An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.

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DO - 10.1109/ISLC.2012.6348388

M3 - Conference article

AN - SCOPUS:84870581662

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EP - 170

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

SN - 0899-9406

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T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012

Y2 - 7 October 2012 through 10 October 2012

ER -

Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer

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