We activated source/drain junctions of complementary metal oxide semiconductor (CMOS) by simply replacing rapid thermal annealing (RTA) in the conventional production flow by non-melt laser spike annealing (LSA). We did not form any additional layers, unlike the conventional laser annealing. The 50-nm gate CMOS devices thus formed had overwhelmingly better Vth roll-offs and larger drain currents compared to those formed by RTA. We found that the LSA-devices without offset spacers had better performance than those with offset spacers, and that the optimization of the overlap length between the gate and source/drain extensions was important due to the minimal lateral diffusion during the sub-millisecond annealing of LSA.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2006 7 7|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)