Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells

A. Neogi*, H. Yoshida, T. Mozume, N. Georgiev, T. Akiyama, A. Tackeuchi, O. Wada

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We demonstrate the ultrafast modulation of interband (IB)-resonant light (1.0-1.1 μm) by near-infrared intersubband (ISB)-resonant light (1.55-1.9 μm) in n-doped InGaAs/AlAsSb multiple quantum wells (QWs) using non-degenerate pump-probe spectroscopy. A modulation with an absorption recovery time of 1.0-2.0 ps has been observed in a planer-type modulation device due to ultrafast ISB relaxation of the carriers. The IB carrier relaxation process in the absence of an ISB-resonant light has also been investigated by time-resolved photoluminescence (PL) measurement. The modulation speed is determined by the inter- and intra-subband relaxation of the carriers in the conduction subband. The modulation speed at 1.1 μm due to an ISB-resonant pump light at 1.95 μm has been observed to be 1.4 ps at excitation energy of 500 fJ/μm2.

本文言語English
ページ(範囲)975-983
ページ数9
ジャーナルOptical and Quantum Electronics
33
7-10
DOI
出版ステータスPublished - 2001 7月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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