Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Kiyoto Takahata, Yoshifumi Muramoto, Hideki Fukano, Kazutoshi Kato, Atsuo Kozen, Shunji Kimura, Yuhki Imai, Yutaka Miyamoto, Osaake Nakajima, Yutaka Matsuoka

研究成果: Article査読

20 被引用数 (Scopus)

抄録

A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

本文言語English
ページ(範囲)31-37
ページ数7
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
6
1
DOI
出版ステータスPublished - 2000 1 1
外部発表はい

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

フィンガープリント 「Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル