Ultrafast spin relaxation in quantum-confined structures for all-optical switching

Osamu Wada*, Atsushi Tackeuchi, Yuji Nishikawa, Tetsuya Nishimura

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

本文言語English
ページ(範囲)602-613
ページ数12
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
3283
DOI
出版ステータスPublished - 1998 12 1
イベントPhysics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States
継続期間: 1998 1 261998 1 26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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