Ultrahigh efficiency III-V on Si MOS capacitor optical modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, Takaaki Kakitsuka, H. Fukuda, S. Matsuo

研究成果: Conference contribution

抄録

A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.

本文言語English
ホスト出版物のタイトルSilicon Photonics
ホスト出版物のサブタイトルFrom Fundamental Research to Manufacturing
編集者Laurent Vivien, Peter O'Brien, Roel G. Baets
出版社SPIE
ISBN(印刷版)9781510618985
DOI
出版ステータスPublished - 2018 1 1
外部発表はい
イベントSilicon Photonics: From Fundamental Research to Manufacturing 2018 - Strasbourg, France
継続期間: 2018 4 232018 4 26

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10686
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Conference

ConferenceSilicon Photonics: From Fundamental Research to Manufacturing 2018
CountryFrance
CityStrasbourg
Period18/4/2318/4/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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