Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, T. Kawano, A. Oishi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.

本文言語English
ページ(範囲)203-210
ページ数8
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
1
2
DOI
出版ステータスPublished - 1995 6
外部発表はい

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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