Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, Toshihiro Kawano, A. Oishi

研究成果: Article

19 引用 (Scopus)

抄録

An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.

元の言語English
ページ(範囲)203-210
ページ数8
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
1
発行部数2
DOI
出版物ステータスPublished - 1995
外部発表Yes

Fingerprint

optical interconnects
Optical interconnects
laser arrays
threshold currents
thresholds
Lasers
Light sources
optical density
Coatings
Wavelength
light sources
slopes
coatings
cavities
optimization
output
wavelengths
lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

これを引用

@article{61a6272d95134167a28bfde982a8bf1a,
title = "Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects",
abstract = "An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.",
author = "K. Uomi and T. Tsuchiya and M. Komori and A. Oka and Toshihiro Kawano and A. Oishi",
year = "1995",
doi = "10.1109/2944.401198",
language = "English",
volume = "1",
pages = "203--210",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects

AU - Uomi, K.

AU - Tsuchiya, T.

AU - Komori, M.

AU - Oka, A.

AU - Kawano, Toshihiro

AU - Oishi, A.

PY - 1995

Y1 - 1995

N2 - An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.

AB - An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.

UR - http://www.scopus.com/inward/record.url?scp=0029322677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029322677&partnerID=8YFLogxK

U2 - 10.1109/2944.401198

DO - 10.1109/2944.401198

M3 - Article

AN - SCOPUS:0029322677

VL - 1

SP - 203

EP - 210

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 2

ER -