抄録
An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 203-210 |
| ページ数 | 8 |
| ジャーナル | IEEE Journal on Selected Topics in Quantum Electronics |
| 巻 | 1 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | Published - 1995 |
| 外部発表 | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
これを引用
Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects. / Uomi, K.; Tsuchiya, T.; Komori, M.; Oka, A.; Kawano, Toshihiro; Oishi, A.
：: IEEE Journal on Selected Topics in Quantum Electronics, 巻 1, 番号 2, 1995, p. 203-210.研究成果: Article
}
TY - JOUR
T1 - Ultralow Threshold 1.3-μm InGaAsP–InP Compressive-Strained Multiquantum-Well Monolithic Laser Array for Parallel High-Density Optical Interconnects
AU - Uomi, K.
AU - Tsuchiya, T.
AU - Komori, M.
AU - Oka, A.
AU - Kawano, Toshihiro
AU - Oishi, A.
PY - 1995
Y1 - 1995
N2 - An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.
AB - An ultralow-threshold 1.3-μm InGaAsP–InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20 °C and 1.62 mA at 90 °C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) with high-reflection coatings.
UR - http://www.scopus.com/inward/record.url?scp=0029322677&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029322677&partnerID=8YFLogxK
U2 - 10.1109/2944.401198
DO - 10.1109/2944.401198
M3 - Article
AN - SCOPUS:0029322677
VL - 1
SP - 203
EP - 210
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 2
ER -