Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections

K. Uomi*, T. Tsuchiya, T. Kawano, K. Nakahara, A. Niwa, A. Oishi

*この研究の対応する著者

研究成果: Conference article査読

抄録

A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnection. It is indicated that the threshold current should be lower than about 3.0, 1.4 and 0.7 mA at 25°C for 200 and 500 Mbits/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 85°C with a shorter turn-on delay time. This paper reviews the ultralow threshold properties of 1.3-μm strained-multi-quantum-well laser. The active width and the number of quantum wells are optimized based on theoretical model to reduce the threshold current. The drastic reduction in threshold current due to the strain-induced effect is achieved with an optimized strain value of 1.4%. Thus, this array is suitable as a light source for practical use in high-speed parallel optical data link applications.

本文言語English
ページ(範囲)105-106
ページ数2
ジャーナルConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
1
出版ステータスPublished - 1995 12 1
外部発表はい
イベントProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
継続期間: 1995 10 301995 11 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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