Ultralow Threshold and Uniform Operation (1.3 ± 0.09 rnA) in 1.3-µm Strained-MQW 10-Element Laser Arrays for Parallel High-Density Optical Interconnects

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, T. Kawano, A. Oishi

研究成果: Article査読

16 被引用数 (Scopus)

抄録

An ultralow-threshold 1.3-µm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 ± 0.09 mA and slope efficiency of 0.37 ± 0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.

本文言語English
ページ(範囲)1-3
ページ数3
ジャーナルIEEE Photonics Technology Letters
7
1
DOI
出版ステータスPublished - 1995 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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