Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias

Y. Yamamoto, H. Makiyama, H. Shinohara, T. Iwamatsu, H. Oda, S. Kamohara, N. Sugii, Y. Yamaguchi, T. Mizutani, T. Hiramoto

研究成果: Conference contribution

47 引用 (Scopus)

抜粋

We demonstrated record 0.37V minimum operation voltage (Vmin) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (AVT∼1.3 mVμm) and adaptive back biasing (ABB), Vmin was lowered down to ∼0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.

元の言語English
ホスト出版物のタイトル2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
ページT212-T213
出版物ステータスPublished - 2013 9 9
イベント2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
継続期間: 2013 6 112013 6 13

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷物)0743-1562

Other

Other2013 Symposium on VLSI Technology, VLSIT 2013
Japan
Kyoto
期間13/6/1113/6/13

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Yamamoto, Y., Makiyama, H., Shinohara, H., Iwamatsu, T., Oda, H., Kamohara, S., Sugii, N., Yamaguchi, Y., Mizutani, T., & Hiramoto, T. (2013). Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias. : 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. T212-T213). [6576627] (Digest of Technical Papers - Symposium on VLSI Technology).