Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima, Hiroshi Ashihara, Atsushi Hiraiwa, Toshiyuki Mine, Yasushi Goto

研究成果: Article査読

15 被引用数 (Scopus)

抄録

We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

本文言語English
ページ(範囲)1165-1171
ページ数7
ジャーナルIEEE Transactions on Electron Devices
52
6
DOI
出版ステータスPublished - 2005 6
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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