Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

Yoshikatsu Jingu, Kazuyuki Hirama, Hiroshi Kawarada

研究成果: Article査読

27 被引用数 (Scopus)

抄録

Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

本文言語English
論文番号4
ページ(範囲)966-972
ページ数7
ジャーナルIEEE Transactions on Electron Devices
57
5
DOI
出版ステータスPublished - 2010 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル