Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa; T. Maeda; K. Sakamoto; H. Itoh; K. Nakamura; K. Koike; D. W. Moon; Y. H. Ha; S. Ichimura; A. Ando

doi:10.1557/proc-567-21

Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa^*, T. Maeda, K. Sakamoto, H. Itoh, K. Nakamura, K. Koike, D. W. Moon, Y. H. Ha, S. Ichimura, A. Ando

^*この研究の対応する著者

研究成果: Conference article › 査読

6 被引用数 (Scopus)

抄録

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

本文言語	English
ページ（範囲）	21-26
ページ数	6
ジャーナル	Materials Research Society Symposium - Proceedings
巻	567
DOI	https://doi.org/10.1557/proc-567-21
出版ステータス	Published - 1999
外部発表	はい
イベント	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA 継続期間: 1999 4月 5 → 1999 4月 8

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

文献へのアクセス

10.1557/proc-567-21

他のファイルとリンク

引用スタイル

@article{c5614c0a716a4478ac412a12fb56976b,

title = "Ultrathin silicon dioxide formation by ozone on ultraflat SI surface",

abstract = "We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.",

author = "A. Kurokawa and T. Maeda and K. Sakamoto and H. Itoh and K. Nakamura and K. Koike and Moon, {D. W.} and Ha, {Y. H.} and S. Ichimura and A. Ando",

year = "1999",

doi = "10.1557/proc-567-21",

language = "English",

volume = "567",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

AU - Kurokawa, A.

AU - Maeda, T.

AU - Sakamoto, K.

AU - Itoh, H.

AU - Nakamura, K.

AU - Koike, K.

AU - Moon, D. W.

AU - Ha, Y. H.

AU - Ichimura, S.

AU - Ando, A.

PY - 1999

Y1 - 1999

N2 - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

AB - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

UR - http://www.scopus.com/inward/record.url?scp=0033313605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033313605&partnerID=8YFLogxK

U2 - 10.1557/proc-567-21

DO - 10.1557/proc-567-21

M3 - Conference article

AN - SCOPUS:0033313605

VL - 567

SP - 21

EP - 26

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

Y2 - 5 April 1999 through 8 April 1999

ER -

Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル