Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa*, T. Maeda, K. Sakamoto, H. Itoh, K. Nakamura, K. Koike, D. W. Moon, Y. H. Ha, S. Ichimura, A. Ando

*この研究の対応する著者

研究成果: Conference article査読

6 被引用数 (Scopus)

抄録

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

本文言語English
ページ(範囲)21-26
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
567
DOI
出版ステータスPublished - 1999
外部発表はい
イベントProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
継続期間: 1999 4 51999 4 8

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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