抄録
We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.
本文言語 | English |
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ページ(範囲) | 21-26 |
ページ数 | 6 |
ジャーナル | Materials Research Society Symposium - Proceedings |
巻 | 567 |
DOI | |
出版ステータス | Published - 1999 |
外部発表 | はい |
イベント | Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA 継続期間: 1999 4月 5 → 1999 4月 8 |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学
- 材料力学
- 機械工学