Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure

K. Nakamura*, S. Ichimura, A. Kurokawa, K. Koike, G. Inoue, T. Fukuda

*この研究の対応する著者

研究成果: Article査読

35 被引用数 (Scopus)

抄録

We have investigated ultrathin silicon oxide film growth by highly concentrated ozone at atmospheric pressure. Oxide film >2 nm was grown on as-received Si(100) even at room temperature. The etching rate by dilute hydrofluoric acid solution of oxide fabricated on Si(100) at 350°C by this method was almost the same as that of thermally grown oxide so that film density is equivalent to that of thermally grown oxide. The etching rate of this film also shows no dependence on the film depth. This is indicating that the transition layer due to the lattice mismatch of substrate and oxide is limited within a thinner region than that of thermally grown oxide. It also indicates that an oxide film with higher film density can be synthesized on the surface with preoxide film already formed to protect bare substrate surfaces.

本文言語English
ページ(範囲)1275-1279
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
17
4
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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