Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang, XiaoHong H. Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, ShuHua H. Liang

    研究成果: Article

    4 引用 (Scopus)

    抄録

    The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

    元の言語English
    ページ(範囲)2500-2503
    ページ数4
    ジャーナルScience China Technological Sciences
    57
    発行部数12
    DOI
    出版物ステータスPublished - 2014 12 11

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    Gallium
    Oxidation
    Composite structures
    Full width at half maximum
    Excitons
    Photoluminescence
    Optical properties
    Temperature
    Substrates
    Hot Temperature
    LDS 751

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    これを引用

    Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. / Yang, Qing; Zhou, XiaoHong H.; Nukui, Takao; Saeki, Yu; Izumi, Sotaro; Tackeuchi, Atsushi; Tatsuoka, Hirokazu; Liang, ShuHua H.

    :: Science China Technological Sciences, 巻 57, 番号 12, 11.12.2014, p. 2500-2503.

    研究成果: Article

    Yang, Q, Zhou, XH, Nukui, T, Saeki, Y, Izumi, S, Tackeuchi, A, Tatsuoka, H & Liang, SH 2014, 'Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium', Science China Technological Sciences, 巻. 57, 番号 12, pp. 2500-2503. https://doi.org/10.1007/s11431-014-5714-y
    Yang, Qing ; Zhou, XiaoHong H. ; Nukui, Takao ; Saeki, Yu ; Izumi, Sotaro ; Tackeuchi, Atsushi ; Tatsuoka, Hirokazu ; Liang, ShuHua H. / Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. :: Science China Technological Sciences. 2014 ; 巻 57, 番号 12. pp. 2500-2503.
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    abstract = "The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.",
    keywords = "gallium, photoluminescence, thermal oxidation, ultraviolet, ZnO layer",
    author = "Qing Yang and Zhou, {XiaoHong H.} and Takao Nukui and Yu Saeki and Sotaro Izumi and Atsushi Tackeuchi and Hirokazu Tatsuoka and Liang, {ShuHua H.}",
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    T1 - Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

    AU - Yang, Qing

    AU - Zhou, XiaoHong H.

    AU - Nukui, Takao

    AU - Saeki, Yu

    AU - Izumi, Sotaro

    AU - Tackeuchi, Atsushi

    AU - Tatsuoka, Hirokazu

    AU - Liang, ShuHua H.

    PY - 2014/12/11

    Y1 - 2014/12/11

    N2 - The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

    AB - The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

    KW - gallium

    KW - photoluminescence

    KW - thermal oxidation

    KW - ultraviolet

    KW - ZnO layer

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