Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang, Xiao Hong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shu Hua Liang

研究成果: Article

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The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

元の言語English
ページ(範囲)2500-2503
ページ数4
ジャーナルScience China Technological Sciences
57
発行部数12
DOI
出版物ステータスPublished - 2014 12 11

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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    Yang, Q., Zhou, X. H., Nukui, T., Saeki, Y., Izumi, S., Tackeuchi, A., Tatsuoka, H., & Liang, S. H. (2014). Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium. Science China Technological Sciences, 57(12), 2500-2503. https://doi.org/10.1007/s11431-014-5714-y