Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy

Y. Kobayashi*, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We report room-temperature (RT) observation of near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence from h-BN heteroepitaxial layers. The h-BN layers were grown on single crystal Ni(111) substrates by flow-rate modulation epitaxy (FME), which is based on the alternate supply of triethylboron and ammonia. The h-BN layers grown with longer NH3 supply time exhibit stronger intensity and narrower full width of half maximum (FWHM) of the near-band-gap luminescence. X-ray diffraction measurements reveal that the FWHM of (0002) h-BN X-ray rocking curves decreases with increasing NH3 supply time. The reduction of lattice defects in h-BN grown by FME with longer NH3 supply time could be the reason for the improved near-band-gap ultraviolet luminescence at RT.

本文言語English
ページ(範囲)1789-1792
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
244
6
DOI
出版ステータスPublished - 2007 6 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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