Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

本文言語English
ページ(範囲)4500-4502
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
7 A
出版ステータスPublished - 2002 7

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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