Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition

S. Takayanagi*, T. Yanagitani, M. Matsukawa

*この研究の対応する著者

研究成果: Article査読

28 被引用数 (Scopus)

抄録

A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (112̄0) orientation in ZnO films. Strong (112̄0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170-250 eV was observed in low gas pressure of 0.1 Pa.

本文言語English
論文番号232902
ジャーナルApplied Physics Letters
101
23
DOI
出版ステータスPublished - 2012 12 3
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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