Unusual valence state and metal-insulator transition in BaV10 O15 probed by hard x-ray photoemission spectroscopy

T. Yoshino, M. Okawa, T. Kajita, S. Dash, R. Shimoyama, K. Takahashi, Y. Takahashi, R. Takayanagi, T. Saitoh, D. Ootsuki, T. Yoshida, E. Ikenaga, N. L. Saini, T. Katsufuji, T. Mizokawa

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We have studied the electronic structure of BaV10O15 across the metal-insulator transition with V trimerization by means of hard-x-ray photoemission spectroscopy (HAXPES) and mean-field calculations. The V 2p HAXPES indicates V2.5+-V3+ charge fluctuation in the metallic phase, and V2+-V3+ charge order in the insulating phase. The V2.5+-V3+ charge fluctuation is consistent with the mean-field solution where a V 3d a1g electron is shared by two V sites with face-sharing VO6 octahedra. The valence-band HAXPES of the metallic phase exhibits pseudogap opening at the Fermi level associated with the charge fluctuation, and a band gap ∼200 meV is established in the insulating phase due to the switching of charge correlation.

本文言語English
論文番号075151
ジャーナルPhysical Review B
95
7
DOI
出版ステータスPublished - 2017 2 27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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