抄録
We report on unusually abrupt drain current change observed in polysilicon thin-film transistors (TFT's) with a channel length and width of 1 μm or smaller. The polysilicon used to fabricate the devices was deposited by LPCVD and the grain size of the film was enhanced by silicon ion implantation followed by a low-temperature anneal. The TFT's exhibited an abrupt drain current change of more than five orders of magnitude for a corresponding gate voltage change of less than 40 mV. A self-limiting positive feedback loop due to impact ionization currents and/or a parasitic bipolar effect are suggested as possible explanations.
本文言語 | English |
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ページ(範囲) | 15-17 |
ページ数 | 3 |
ジャーナル | IEEE Electron Device Letters |
巻 | 11 |
号 | 1 |
DOI | |
出版ステータス | Published - 1990 1月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学