Unusually Abrupt Switching in Submicrometer Thin-Film Transistors Using a Polysilicon Film with Enhanced Grain Size

Noriyoshi Yamauchi, Noriyoshi Yamauchi, Rafael Reif

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We report on unusually abrupt drain current change observed in polysilicon thin-film transistors (TFT's) with a channel length and width of 1 μm or smaller. The polysilicon used to fabricate the devices was deposited by LPCVD and the grain size of the film was enhanced by silicon ion implantation followed by a low-temperature anneal. The TFT's exhibited an abrupt drain current change of more than five orders of magnitude for a corresponding gate voltage change of less than 40 mV. A self-limiting positive feedback loop due to impact ionization currents and/or a parasitic bipolar effect are suggested as possible explanations.

本文言語English
ページ(範囲)15-17
ページ数3
ジャーナルIEEE Electron Device Letters
11
1
DOI
出版ステータスPublished - 1990 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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