Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction

Ziqian Wang, Shoucong Ning, Takeshi Fujita, Akihiko Hirata, Mingwei Chen

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2 monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.

本文言語English
ページ(範囲)10308-10316
ページ数9
ジャーナルACS Nano
10
11
DOI
出版ステータスPublished - 2016 11 22
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

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