Vacancy ordering at heterovalent interfaces

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

研究成果: Article

13 引用 (Scopus)

抜粋

Atomic structures of three Ga2Se3 epilayers grown on GaAs(100) or ZnSe(100) epilayers by molecular beam epitaxy were studied by transmission electron microscopy. A new vacancy ordered structure was found in the heteroepitaxial interface regions of Ga2Se3 epilayers. The ordered structure is described as an alternate stacking of two types of Ga planes in the growth direction. One half of the sites are vacancies in one type of Ga plane, while the other type of Ga plane is fully occupied by Ga atoms. Comparison of three Ga2Se3 epilayers indicates a strong influence of surface chemistry of substrate epilayers on the formation of the vacancy ordering. A highly developed two-dimensional ordering has occured in the epilayer grown on a GaAs(100) surface with (4 × 3) rereconstructions.

元の言語English
ページ(範囲)181-186
ページ数6
ジャーナルSurface Science
267
発行部数1-3
DOI
出版物ステータスPublished - 1992
外部発表Yes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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  • これを引用

    Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M., & Gunshor, R. L. (1992). Vacancy ordering at heterovalent interfaces. Surface Science, 267(1-3), 181-186. https://doi.org/10.1016/0039-6028(92)91116-S