抄録
Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.
本文言語 | English |
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ページ(範囲) | 313-315 |
ページ数 | 3 |
ジャーナル | Journal of Electronic Materials |
巻 | 31 |
号 | 4 |
DOI | |
出版ステータス | Published - 2002 4月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学