Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto; Kazuhide Kumakura; Toshio Nishida; Naoki Kobayashi

doi:10.1007/s11664-002-0149-9

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto^*, Kazuhide Kumakura, Toshio Nishida, Naoki Kobayashi

^*この研究の対応する著者

研究成果 › 査読

22 被引用数 (Scopus)

抄録

Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔE_v) increases with the In mole fraction (x) and is expressed as ΔE_v (eV) = 0.85x for x ≤ 0.28. The ΔE_v value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

本文言語	English
ページ（範囲）	313-315
ページ数	3
ジャーナル	Journal of Electronic Materials
巻	31
号	4
DOI	https://doi.org/10.1007/s11664-002-0149-9
出版ステータス	Published - 2002 4
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1007/s11664-002-0149-9

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@article{b97e2e3cf0dd4d6289007f32c9bb0a57,

title = "Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes",

abstract = "Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.",

keywords = "Band offset, Capacitance-voltage characteristics, GaN, Heterojunction diode, InGaN, P-InGaN, Valence-band discontinuity",

author = "Toshiki Makimoto and Kazuhide Kumakura and Toshio Nishida and Naoki Kobayashi",

year = "2002",

month = apr,

doi = "10.1007/s11664-002-0149-9",

language = "English",

volume = "31",

pages = "313--315",

journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

number = "4",

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TY - JOUR

T1 - Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

AU - Makimoto, Toshiki

AU - Kumakura, Kazuhide

AU - Nishida, Toshio

AU - Kobayashi, Naoki

PY - 2002/4

Y1 - 2002/4

N2 - Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

AB - Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

KW - Band offset

KW - Capacitance-voltage characteristics

KW - GaN

KW - Heterojunction diode

KW - InGaN

KW - P-InGaN

KW - Valence-band discontinuity

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U2 - 10.1007/s11664-002-0149-9

DO - 10.1007/s11664-002-0149-9

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AN - SCOPUS:0036539756

VL - 31

SP - 313

EP - 315

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

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