Valence-band parameters and hole mobility of Ge-Si alloys-theory

K. Takeda*, A. Taguchi, M. Sakata

*この研究の対応する著者

研究成果: Article査読

51 被引用数 (Scopus)

抄録

Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.

本文言語English
論文番号013
ページ(範囲)2237-2249
ページ数13
ジャーナルJournal of Physics C: Solid State Physics
16
12
DOI
出版ステータスPublished - 1983
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 工学(全般)
  • 物理学および天文学(全般)

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