Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

Masafumi Inaba, Akinori Seki, Kazuaki Sato, Tomoyoshi Kushida, Taisuke Kageura, Hayate Yamano, Atsushi Hiraiwa, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.

本文言語English
論文番号1700040
ジャーナルPhysica Status Solidi (B) Basic Research
254
9
DOI
出版ステータスPublished - 2017 9月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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