Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen, Katsuyuki Utaka, Y. H. Zhuang, Y. Y. Liu, A. Yariv

研究成果: Article

6 引用 (Scopus)

抄録

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

元の言語English
ページ(範囲)874-876
ページ数3
ジャーナルApplied Physics Letters
50
発行部数14
DOI
出版物ステータスPublished - 1987
外部発表Yes

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bipolar transistors
heterojunctions
lasers
mesas
optical switching
laser outputs
thresholds

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser. / Chen, T. R.; Utaka, Katsuyuki; Zhuang, Y. H.; Liu, Y. Y.; Yariv, A.

:: Applied Physics Letters, 巻 50, 番号 14, 1987, p. 874-876.

研究成果: Article

Chen, T. R. ; Utaka, Katsuyuki ; Zhuang, Y. H. ; Liu, Y. Y. ; Yariv, A. / Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser. :: Applied Physics Letters. 1987 ; 巻 50, 番号 14. pp. 874-876.
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