Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen; K. Utaka; Y. H. Zhuang; Y. Y. Liu; A. Yariv

doi:10.1063/1.98018

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen^*, K. Utaka, Y. H. Zhuang, Y. Y. Liu, A. Yariv

^*この研究の対応する著者

研究成果: Article › 査読

6 被引用数 (Scopus)

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A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

本文言語	English
ページ（範囲）	874-876
ページ数	3
ジャーナル	Applied Physics Letters
巻	50
号	14
DOI	https://doi.org/10.1063/1.98018
出版ステータス	Published - 1987
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.98018

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title = "Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser",

abstract = "A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.",

author = "Chen, {T. R.} and K. Utaka and Zhuang, {Y. H.} and Liu, {Y. Y.} and A. Yariv",

year = "1987",

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journal = "Applied Physics Letters",

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AU - Chen, T. R.

AU - Utaka, K.

AU - Zhuang, Y. H.

AU - Liu, Y. Y.

AU - Yariv, A.

PY - 1987

Y1 - 1987

N2 - A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

AB - A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

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Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

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