Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen, Katsuyuki Utaka, Y. H. Zhuang, Y. Y. Liu, A. Yariv

研究成果: Article

6 引用 (Scopus)

抜粋

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

元の言語English
ページ(範囲)874-876
ページ数3
ジャーナルApplied Physics Letters
50
発行部数14
DOI
出版物ステータスPublished - 1987
外部発表Yes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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