Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

T. Iwasaki*, S. Mejima, T. Koide, R. Morikane, H. Nakayama, T. Shinada, I. Ohdomari, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO2 substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 1017 ions/cm2. Dense Ni nanoparticles in the order of 1011-1012 cm- 2 were obtained on a SiO2 substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO2.

本文言語English
ページ(範囲)1443-1446
ページ数4
ジャーナルDiamond and Related Materials
17
7-10
DOI
出版ステータスPublished - 2008 7 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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