Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada*, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi, T. Fujii

*この研究の対応する著者

研究成果: Article査読

64 被引用数 (Scopus)

抄録

A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

本文言語English
ページ(範囲)16-17
ページ数2
ジャーナルApplied Physics Letters
54
1
DOI
出版ステータスPublished - 1989 1月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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