Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada; H. Nobuhara; H. Hamaguchi; T. Mikawa; A. Tackeuchi; T. Fujii

doi:10.1063/1.100822

Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada^*, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi, T. Fujii

^*この研究の対応する著者

研究成果: Article › 査読

67 被引用数 (Scopus)

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A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

本文言語	English
ページ（範囲）	16-17
ページ数	2
ジャーナル	Applied Physics Letters
巻	54
号	1
DOI	https://doi.org/10.1063/1.100822
出版ステータス	Published - 1989 1月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.100822

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title = "Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice",

abstract = "A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.",

author = "O. Wada and H. Nobuhara and H. Hamaguchi and T. Mikawa and A. Tackeuchi and T. Fujii",

year = "1989",

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T1 - Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

AU - Wada, O.

AU - Nobuhara, H.

AU - Hamaguchi, H.

AU - Mikawa, T.

AU - Tackeuchi, A.

AU - Fujii, T.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

AB - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

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