Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Ken Nakamura*, Shingo Ichimura

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

本文言語English
ページ(範囲)7602-7604
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
10
DOI
出版ステータスPublished - 2005 10 11
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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