Visible electroluminescence in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato, Akira Masuzawa, Hidefumi Sato, Takashi Noma, Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

研究成果: Article査読

21 被引用数 (Scopus)

抄録

The mechanism of electroluminescence in hydrogenated amorphous silicon oxynitride was investigated. The luminescence can be observed only in the samples with high nitrogen content and annealed at high temperatures. It depends on the direction of the applied electric field, and its peak photon energy decreases from 2.3 to 1.8 eV as the nitrogen content increases. From the measurements of conduction current and Fourier transform infrared absorption spectroscopy, it was found that the electrical conduction in the electric field region where the luminescence was observed is governed by the Poole-Frenkel process at the defect centers induced by the high temperature annealing. The electroluminescence is considered to be caused by electronic transition between the band-tail states, at least one of which is related to N or Si-N bonds.

本文言語English
ページ(範囲)2216-2220
ページ数5
ジャーナルJournal of Applied Physics
90
5
DOI
出版ステータスPublished - 2001 9 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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