The preparation of field-effect transistors (FET), based on poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV), with bottom-contact type interdigital electrodes of Cr/Au and Al/Au, on the SiO 2/Si substrates, was discussed. The orange light emission was observed when the devices were operated in vacuum. It was shown that the luminescence efficiency of the FET with Al/Au electrodes was higher than that of Cr/Au electrodes. It was observed that the simultaneous injection of holes and electrons into MEH-PPV occured efficiently with the application of Al/Au heteroelectrodes.
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