Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2

Hiroyuki Nishikaw, Eiki Watanabe, Daisuke Ito, Yuryo Sakurai, Kaya Nagasawa, Yoshimichi Ohki

    研究成果: Article

    118 引用 (Scopus)

    抄録

    Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation

    元の言語English
    ページ(範囲)3513-3517
    ページ数5
    ジャーナルJournal of Applied Physics
    80
    発行部数6
    出版物ステータスPublished - 1996 9 15

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    photoluminescence
    dosage
    photons
    oxygen
    irradiation
    electron spin
    excitation
    partial pressure
    nanocrystals
    preparation
    silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    これを引用

    Nishikaw, H., Watanabe, E., Ito, D., Sakurai, Y., Nagasawa, K., & Ohki, Y. (1996). Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 Journal of Applied Physics, 80(6), 3513-3517.

    Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 . / Nishikaw, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Sakurai, Yuryo; Nagasawa, Kaya; Ohki, Yoshimichi.

    :: Journal of Applied Physics, 巻 80, 番号 6, 15.09.1996, p. 3513-3517.

    研究成果: Article

    Nishikaw, H, Watanabe, E, Ito, D, Sakurai, Y, Nagasawa, K & Ohki, Y 1996, 'Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 ', Journal of Applied Physics, 巻. 80, 番号 6, pp. 3513-3517.
    Nishikaw H, Watanabe E, Ito D, Sakurai Y, Nagasawa K, Ohki Y. Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 Journal of Applied Physics. 1996 9 15;80(6):3513-3517.
    Nishikaw, Hiroyuki ; Watanabe, Eiki ; Ito, Daisuke ; Sakurai, Yuryo ; Nagasawa, Kaya ; Ohki, Yoshimichi. / Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 :: Journal of Applied Physics. 1996 ; 巻 80, 番号 6. pp. 3513-3517.
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    abstract = "Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation",
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