Volatile/nonvolatile dual-functional atom transistor

Tsuyoshi Hasegawa, Yaomi Itoh, Hirofumi Tanaka, Takami Hino, Tohru Tsuruoka, Kazuya Terabe, Hisao Miyazaki, Kazuhito Tsukagoshi, Takuji Ogawa, Shu Yamaguchi, Masakazu Aono

研究成果: Article査読

34 被引用数 (Scopus)

抄録

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 10 4 times switching was achieved with the prototype.

本文言語English
論文番号015204
ジャーナルApplied Physics Express
4
1
DOI
出版ステータスPublished - 2011 1 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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