抄録
The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.
本文言語 | English |
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ホスト出版物のタイトル | IEEE International Reliability Physics Symposium Proceedings |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ページ | 582-583 |
ページ数 | 2 |
巻 | 2003-January |
ISBN(印刷版) | 0780376498 |
DOI | |
出版ステータス | Published - 2003 |
外部発表 | はい |
イベント | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States 継続期間: 2003 3月 30 → 2003 4月 4 |
Other
Other | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 |
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国/地域 | United States |
City | Dallas |
Period | 03/3/30 → 03/4/4 |
ASJC Scopus subject areas
- 工学(全般)