Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

本文言語English
ホスト出版物のタイトルIEEE International Reliability Physics Symposium Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ582-583
ページ数2
2003-January
ISBN(印刷版)0780376498
DOI
出版ステータスPublished - 2003
外部発表はい
イベント2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States
継続期間: 2003 3 302003 4 4

Other

Other2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
国/地域United States
CityDallas
Period03/3/3003/4/4

ASJC Scopus subject areas

  • 工学(全般)

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