Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa; S. Sakai; D. Ishikawa

doi:10.1109/RELPHY.2003.1197816

Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

本文言語	English
ホスト出版物のタイトル	IEEE International Reliability Physics Symposium Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	582-583
ページ数	2
巻	2003-January
ISBN（印刷版）	0780376498
DOI	https://doi.org/10.1109/RELPHY.2003.1197816
出版ステータス	Published - 2003
外部発表	はい
イベント	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States 継続期間: 2003 3月 30 → 2003 4月 4

Other

Other	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
国/地域	United States
City	Dallas
Period	03/3/30 → 03/4/4

ASJC Scopus subject areas

工学（全般）

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10.1109/RELPHY.2003.1197816

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引用スタイル

Hiraiwa, A, Sakai, S & Ishikawa, D 2003, Voltage-driven distribution of gate oxide breakdown. in IEEE International Reliability Physics Symposium Proceedings. vol. 2003-January, 1197816, Institute of Electrical and Electronics Engineers Inc., pp. 582-583, 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003, Dallas, United States, 03/3/30. https://doi.org/10.1109/RELPHY.2003.1197816

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KW - Capacitors

KW - Dielectric breakdown

KW - Dielectric substrates

KW - Electric breakdown

KW - MOS devices

KW - Pulse generation

KW - Stochastic processes

KW - Stress

KW - Weibull distribution

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PB - Institute of Electrical and Electronics Engineers Inc.

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Voltage-driven distribution of gate oxide breakdown

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