抄録
Infrared spectra of the light-emitting diodes fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-p-phenylenevinylene) have been measured in situ with an external reflection apparatus on a Fourier-transform infrared spectrophotometer. Voltage-induced infrared absorption spectra have been measured using the difference-spectrum method. The observed bands have been attributed to injected positive carriers (polarons) on the basis of the spectra of the carriers generated by iodine-doping, Na-doping, and photo-irradiation. The observation of positive carriers is probably related to the predominance of injected positive carriers, which reduces the electroluminescence efficiency of the light-emitting diodes.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1649-1650 |
| ページ数 | 2 |
| ジャーナル | Synthetic Metals |
| 巻 | 121 |
| 号 | 1-3 |
| DOI | |
| 出版ステータス | Published - 2001 3月 15 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 材料力学
- 機械工学
- 金属および合金
- 材料化学