Voltage-Induced Infrared Spectra from Polymer Field-Effect Transistors

Yukio Furukawa*, Jun Yamamoto, Don Chan Cho, Tatsuo Mori

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Charge-induced infrared absorption spectra from the metal-insulator-semiconductor diodes fabricated with aluminum oxide, poly(p-xylylene), and SiO2 as gate dielectric and regioregular poly(3-octylthiophene) as organic semiconductor have been measured in situ with reflection or transmission configurations by the FT-IR difference-spectrum method. The observed bands have been attributed to the carriers injected into the polymer layers under the application of minus gate bias. The wavenumber of the band around 1300 cm-1 depends on the gate voltage, indicating that the structure of the carriers depends on the carrier concentration. There exist upper limits in the concentrations of the injected carriers. In situ infrared absorption measurements provide the information about the injected carriers, which affect the properties and the functions of polymer field-effect devices.

本文言語English
ページ(範囲)9-18
ページ数10
ジャーナルMacromolecular Symposia
205
DOI
出版ステータスPublished - 2004 1月

ASJC Scopus subject areas

  • 凝縮系物理学
  • 有機化学
  • ポリマーおよびプラスチック
  • 材料化学

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