Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

Hiroya Tsuji, Yukio Furukawa

    研究成果: Article

    2 引用 (Scopus)

    抄録

    The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

    元の言語English
    ページ(範囲)353-359
    ページ数7
    ジャーナルMolecular Crystals and Liquid Crystals
    455
    発行部数1
    DOI
    出版物ステータスPublished - 2006 10 1

    Fingerprint

    Organic field effect transistors
    Diamines
    Temperature programmed desorption
    diamines
    infrared spectra
    field effect transistors
    Infrared radiation
    Electric potential
    electric potential
    Stark effect
    Hole mobility
    Infrared absorption
    hole mobility
    Silicon
    Field effect transistors
    infrared absorption
    silicon
    Substrates
    configurations
    diphenyl

    ASJC Scopus subject areas

    • Condensed Matter Physics

    これを引用

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    abstract = "The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.",
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    AU - Furukawa, Yukio

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