Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

Hiroya Tsuji, Yukio Furukawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

本文言語English
ページ(範囲)353-359
ページ数7
ジャーナルMolecular Crystals and Liquid Crystals
455
1
DOI
出版ステータスPublished - 2006 10 1

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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