抄録
The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 353-359 |
| ページ数 | 7 |
| ジャーナル | Molecular Crystals and Liquid Crystals |
| 巻 | 455 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | Published - 2006 10 1 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
これを引用
Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD). / Tsuji, Hiroya; Furukawa, Yukio.
：: Molecular Crystals and Liquid Crystals, 巻 455, 番号 1, 01.10.2006, p. 353-359.研究成果: Article
}
TY - JOUR
T1 - Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)
AU - Tsuji, Hiroya
AU - Furukawa, Yukio
PY - 2006/10/1
Y1 - 2006/10/1
N2 - The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.
AB - The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.
KW - Infrared spectroscopy
KW - Mobility
KW - Organic field-effect transistors
KW - TPD
UR - http://www.scopus.com/inward/record.url?scp=33747602821&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747602821&partnerID=8YFLogxK
U2 - 10.1080/15421400600698998
DO - 10.1080/15421400600698998
M3 - Article
AN - SCOPUS:33747602821
VL - 455
SP - 353
EP - 359
JO - Molecular Crystals and Liquid Crystals
JF - Molecular Crystals and Liquid Crystals
SN - 1542-1406
IS - 1
ER -