Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?

N. Sugii, T. Iwamatsu, Y. Yamamoto, H. Makiyama, Hirofumi Shinohara, H. Oda, S. Kamohara, Y. Yamaguchi, K. Ishibashi, T. Mizutani, T. Hiramoto

研究成果: Conference contribution

抄録

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.

元の言語English
ホスト出版物のタイトル2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
出版者IEEE Computer Society
ISBN(印刷物)9781479913602
DOI
出版物ステータスPublished - 2013
外部発表Yes
イベント2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
継続期間: 2013 10 72013 10 10

Other

Other2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
United States
Monterey, CA
期間13/10/713/10/10

Fingerprint

Silicon
Controllers
Oxides
Networks (circuits)
Static random access storage
Electric potential
Power electronics
Electronic equipment
Internet of things

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Sugii, N., Iwamatsu, T., Yamamoto, Y., Makiyama, H., Shinohara, H., Oda, H., ... Hiramoto, T. (2013). Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 [6716576] IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716576

Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? / Sugii, N.; Iwamatsu, T.; Yamamoto, Y.; Makiyama, H.; Shinohara, Hirofumi; Oda, H.; Kamohara, S.; Yamaguchi, Y.; Ishibashi, K.; Mizutani, T.; Hiramoto, T.

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716576.

研究成果: Conference contribution

Sugii, N, Iwamatsu, T, Yamamoto, Y, Makiyama, H, Shinohara, H, Oda, H, Kamohara, S, Yamaguchi, Y, Ishibashi, K, Mizutani, T & Hiramoto, T 2013, Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716576, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13/10/7. https://doi.org/10.1109/S3S.2013.6716576
Sugii N, Iwamatsu T, Yamamoto Y, Makiyama H, Shinohara H, Oda H その他. Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? : 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society. 2013. 6716576 https://doi.org/10.1109/S3S.2013.6716576
Sugii, N. ; Iwamatsu, T. ; Yamamoto, Y. ; Makiyama, H. ; Shinohara, Hirofumi ; Oda, H. ; Kamohara, S. ; Yamaguchi, Y. ; Ishibashi, K. ; Mizutani, T. ; Hiramoto, T. / Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013.
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