VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter

Bo Ma, Hiroyuki Kuwae, Akiko Okada, Weixin Fu, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

1 引用 (Scopus)

抄録

We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.

元の言語English
ホスト出版物のタイトル2016 International Conference on Electronics Packaging, ICEP 2016
出版者Institute of Electrical and Electronics Engineers Inc.
ページ447-450
ページ数4
ISBN(電子版)9784904090176
DOI
出版物ステータスPublished - 2016 6 7
イベント2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
継続期間: 2016 4 202016 4 22

Other

Other2016 International Conference on Electronics Packaging, ICEP 2016
Japan
Hokkaido
期間16/4/2016/4/22

Fingerprint

Quartz
Optical filters
Low pass filters
Single crystals
Vacuum
Substrates
Heat resistance
Tensile strength
Infrared radiation
Fabrication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Mechanics of Materials

これを引用

Ma, B., Kuwae, H., Okada, A., Fu, W., Shoji, S., & Mizuno, J. (2016). VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. : 2016 International Conference on Electronics Packaging, ICEP 2016 (pp. 447-450). [7486866] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP.2016.7486866

VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. / Ma, Bo; Kuwae, Hiroyuki; Okada, Akiko; Fu, Weixin; Shoji, Shuichi; Mizuno, Jun.

2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 447-450 7486866.

研究成果: Conference contribution

Ma, B, Kuwae, H, Okada, A, Fu, W, Shoji, S & Mizuno, J 2016, VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. : 2016 International Conference on Electronics Packaging, ICEP 2016., 7486866, Institute of Electrical and Electronics Engineers Inc., pp. 447-450, 2016 International Conference on Electronics Packaging, ICEP 2016, Hokkaido, Japan, 16/4/20. https://doi.org/10.1109/ICEP.2016.7486866
Ma B, Kuwae H, Okada A, Fu W, Shoji S, Mizuno J. VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. : 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 447-450. 7486866 https://doi.org/10.1109/ICEP.2016.7486866
Ma, Bo ; Kuwae, Hiroyuki ; Okada, Akiko ; Fu, Weixin ; Shoji, Shuichi ; Mizuno, Jun. / VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 447-450
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