VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter

Bo Ma, Hiroyuki Kuwae, Akiko Okada, Weixin Fu, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.

本文言語English
ホスト出版物のタイトル2016 International Conference on Electronics Packaging, ICEP 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ447-450
ページ数4
ISBN(電子版)9784904090176
DOI
出版ステータスPublished - 2016 6 7
イベント2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
継続期間: 2016 4 202016 4 22

出版物シリーズ

名前2016 International Conference on Electronics Packaging, ICEP 2016

Other

Other2016 International Conference on Electronics Packaging, ICEP 2016
国/地域Japan
CityHokkaido
Period16/4/2016/4/22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学
  • 材料力学

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