W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS

Xin Yang, Zheng Sun, Takayuki Shibata, Toshihiko Yoshimasu

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper presents a sub-harmonic mixer IC design for W-band automotive radar applications in 130-nm SiGe BiCMOS technology. The mixer makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure mixer core with a Marchand balun for the W-band on-wafer measurement. The balun achieves a measured amplitude imbalanced of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz. The sub-harmonic mixer IC exhibits a conversion gain of 3.8 dB at 80 GHz with an LO power of 0 dBm at 39.5 GHz. And the mixer core only consumes 0.42 mA with a supply voltage of 2.5 V.

本文言語English
ホスト出版物のタイトル2015 IEEE International Wireless Symposium, IWS 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479919284
DOI
出版ステータスPublished - 2015 7 22
イベントIEEE International Wireless Symposium, IWS 2015 - Shenzhen, China
継続期間: 2015 3 302015 4 1

出版物シリーズ

名前2015 IEEE International Wireless Symposium, IWS 2015

Other

OtherIEEE International Wireless Symposium, IWS 2015
CountryChina
CityShenzhen
Period15/3/3015/4/1

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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