W-polymetal gate with low W/poly-Si interface resistance for high-speed/high-density embedded memory

Tomohiro Yamashita*, Yukio Nishida, Kiyoshi Hayashi, Takahisa Eimori, Masahide Inuishi, Yuzuru Ohji

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A new W-polymetal gate electrode with the structure of W/WN/WSi/poly-Si is proposed. The W-polymetal gate is suitable for high-density memories since it has low resistance and is compatible with the self-aligned contact process. In our study, however, it is found that the interface of W and poly-Si has non-ohmic and quite high resistance in the case wherein only WN is used as a barrier film. This resistance increases the delay in complementary metal-oxide-semiconductor (CMOS) logic circuits and prevents high-speed operation. Our new process includes the deposition of thin WSi on poly-Si, followed by rapid thermal annealing, which results in ohmic and sufficiently low contact resistance between W and poly-Si. It is also demonstrated that selective gate reoxidation is successfully applied for this new structure, and the insertion of thin WSi does not cause any adverse effect on the electrical characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET). This process is promising for high-speed and high-density embedded memory.

本文言語English
ページ(範囲)1799-1803
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
4 B
DOI
出版ステータスPublished - 2004 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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