Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

研究成果: Conference contribution

抄録

SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

本文言語English
ホスト出版物のタイトルICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ542-545
ページ数4
ISBN(電子版)9784904090138
DOI
出版ステータスPublished - 2015 5 20
外部発表はい
イベント2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
継続期間: 2015 4 142015 4 17

出版物シリーズ

名前ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
国/地域Japan
CityKyoto
Period15/4/1415/4/17

ASJC Scopus subject areas

  • 電子工学および電気工学

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