Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

研究成果: Conference contribution

抜粋

SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

元の言語English
ホスト出版物のタイトルICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ542-545
ページ数4
ISBN(電子版)9784904090138
DOI
出版物ステータスPublished - 2015 5 20
外部発表Yes
イベント2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
継続期間: 2015 4 142015 4 17

出版物シリーズ

名前ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Japan
Kyoto
期間15/4/1415/4/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Mu, F., Fujino, M., Suga, T., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2015). Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. : ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 542-545). [7111073] (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111073