Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer

M. Hu, Suguru Noda, T. Okubo, H. Komiyama

研究成果: Article

6 引用 (Scopus)

抄録

Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.

元の言語English
ページ(範囲)625-628
ページ数4
ジャーナルApplied Physics A: Materials Science and Processing
79
発行部数3
DOI
出版物ステータスPublished - 2004 8
外部発表Yes

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wettability
Crystal orientation
Wetting
Crystalline materials
Thin films
adhesion
Adhesion
thin films
Sputter deposition
Interfacial energy
surface energy
Transmission electron microscopy
transmission electron microscopy
Substrates
interactions
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

これを引用

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