抄録
Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 625-628 |
| ページ数 | 4 |
| ジャーナル | Applied Physics A: Materials Science and Processing |
| 巻 | 79 |
| 発行部数 | 3 |
| DOI | |
| 出版物ステータス | Published - 2004 8 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
これを引用
Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer. / Hu, M.; Noda, Suguru; Okubo, T.; Komiyama, H.
：: Applied Physics A: Materials Science and Processing, 巻 79, 番号 3, 08.2004, p. 625-628.研究成果: Article
}
TY - JOUR
T1 - Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer
AU - Hu, M.
AU - Noda, Suguru
AU - Okubo, T.
AU - Komiyama, H.
PY - 2004/8
Y1 - 2004/8
N2 - Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.
AB - Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.
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UR - http://www.scopus.com/inward/citedby.url?scp=3042687239&partnerID=8YFLogxK
U2 - 10.1007/s00339-004-2604-3
DO - 10.1007/s00339-004-2604-3
M3 - Article
VL - 79
SP - 625
EP - 628
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 3
ER -