Wide modulation of coercive fields in Mn4N ferrimagnetic thin films caused dominantly by dislocation microstructures

Shinji Isogami*, Mitsuru Ohtake, Yusuke Kozuka, Yukiko K. Takahashi

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Perpendicular magnetic anisotropy and coercive fields (Hc) are governed by the degree of order of N (S) in ferrimagnetic Mn4N thin films. However, in this study, we observed non-negligible modulation of Hc extending from 10 to 7.5 kOe for three Mn4N films grown at a substrate temperature (Tsub) in the range of 400–500 °C, even with identical S, which has not been discussed to date. The possible mechanisms for this phenomenon were explored by transport properties and fine structural analysis. The results indicated that longitudinal resistivity and anomalous Hall resistivity remain unchanged for three Mn4N films. Conversely, the number of dislocations and in-plane grain size (D) increased, whereas the residual strain (ε) decreased with increasing Tsub. This indicates that Hc of the Mn4N film with the same S is sensitive to the variation in dislocations, D and ε. Tunable Hc of this type can be effectively applied in magnetic and spintronic devices using ferrimagnetic Mn4N films, because Hc is an important determinant of the thermal stability of magnetization and working power consumption.

本文言語English
論文番号169642
ジャーナルJournal of Magnetism and Magnetic Materials
560
DOI
出版ステータスPublished - 2022 10月 15
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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