Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application

H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, A. Hiraiwa

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.

本文言語English
ホスト出版物のタイトル2014 IEEE International Electron Devices Meeting, IEDM 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ11.2.1-11.2.4
February
ISBN(電子版)9781479980017
DOI
出版ステータスPublished - 2015 2 20
イベント2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
継続期間: 2014 12 152014 12 17

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
番号February
2015-February
ISSN(印刷版)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
国/地域United States
CitySan Francisco
Period14/12/1514/12/17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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